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High-k and ALD/CVD Metal Precursor Market size to hit USD 965.7 million by 2024
Over the past several years, high-k, ALD, and CVD metal precursors have increasingly attracted interest as possible candidates for advanced thin film applications. Recent developments in the industry have been driven by the need for thin films with specific properties to support a range of electronics and semiconductor applications. Leading players in the business are focusing on offering diverse and cost-effective solutions.
Hybrid organic-inorganic films are rapidly gaining traction on account of their mechanical, optical, chemical, dielectric, and conductive properties. Future trends in the market will likely be influenced by growing penetration of thin film materials across new application and constant technological innovations by manufacturers.
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It is estimated that global high-k & ALD/CVD metal precursors market size will surpass an annual valuation of over US$965.7 million by 2024, with a robust demand for advanced electronics products. Highlighted below are some of the top trends augmenting the technology adoption in the future.
The advent of advanced device shrinking technologies such as ALD and CVD has enabled manufacturers to design thin films with high aspect ratios. A large number of manufacturers are replacing poly-Si with platinum as a potential electrode and substituting commonly used SiO2 with dielectric materials like hafnium and silicon compounds. Metal-organic compounds will continue to gain recognition as a metal precursor on account of low thermal stability.
High-k gates technology segment was valued at more than US$33 million in 2015 and is projected to witness a CAGR of around 23% through 2024. The product demand will be largely influenced by the need for accurate and timely translation of large amounts of data used across various industries.
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Electronics manufacturers have been making substantial research and development efforts in recent years, which has allowed them to build high-purity advanced metal precursors that can help meet different process requirements. The fabrication of semiconductors faster, cost-effectively, and seamlessly requires a more complex 3D structure, which is likely to augment demand for high-k layer and vapor deposition technology in the coming years.
The industry requires collaborations across the entire value chain both in terms of new molecules and hardware to deliver chemicals into the equipment more efficiently. Future trends in chemical designs will witness growing role of intellectual property rights protection measures.
In terms of the regional landscape, U.S. high-k & ALD/CVD metal precursor industry size was valued at US$30 million in 2015 and is expected to witness steady growth in the forthcoming years. Expansion of the regional microelectronics and nanotechnology, due to complexities in semiconductor manufacturing and transition to 450mm wafers processing technology will complement the regional outlook.
Meanwhile, China, which accounted for more than 35% of the market share in terms of revenue in 2015, will record substantial gains in the future. The region is experiencing growing demand for sophisticated electronics products. Taiwan has one of the largest consumer bases for semiconductor materials in the Asia Pacific due to the presence of numerous major chipmakers who are bound to witness lucrative opportunities over the next few years.
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Excessive risk of impurity levels may restrict the adoption of high-k, ALD, and CVD metal precursors to some extent. However, a consistent demand for advanced semiconductor technologies and ongoing developments in advanced wafer fabrication technology will augment the industry trends.
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